npn 2n2221 ? 2N2221A 2n2222 ? 2n2222a 1 | 4 s s w w i i t t c c h h i i n n g g s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s the 2n2221-a and 2n2222-a are npn transistors mounted in to-18 metal case . they are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. compliance to rohs absolute maximum ratings symbol ratings value unit 2n2221 2n2222 2N2221A 2n2222a v ceo collector-emitter voltage 30 40 v v cbo collector-base voltage 60 75 v v ebo emitter-base voltage 5 6 v i c collector current 800 ma p d total power dissipation t amb = 25 0.5 w t case = 25 1.8 t j junction temperature 175 c t stg storage temperature range -65 to +200 c thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient in free air 50 c/w r thj-c thermal resistance, junction to case 187.5 c/w
npn 2n2221 ? 2N2221A 2n2222 ? 2n2222a 16/10/2012 comset semiconductors 2 | 4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i cbo collector cutoff current v cb = 50 v i e = 0 t j = 25c 2n2221-2n2222 - - 10 na t j = 150c 2n2221-2n2222 - - 10 a v cb = 60 v i e = 0 t j = 25c 2N2221A-2n2222a - - 10 na t j = 150c 2N2221A-2n2222a - - 10 a i ebo emitter cutoff current v be = 3.0 v, i c =0 2n2221-2n2222 - - 10 na 2N2221A-2n2222a i cex collector cutoff current v ce = 60 v, -v be = 3v 2N2221A-2n2222a - - 10 na v ceo collector emitter breakdown voltage (*) i c = 10 ma, i b = 0 2n2221-2n2222 30 - - v 2N2221A-2n2222a 40 - - v cbo collector base breakdown voltage i c = 10 a, i e = 0 2n2221-2n2222 60 - - v 2N2221A-2n2222a 75 - - v ebo emitter base breakdown voltage i e = 10 a, i c = 0 2n2221-2n2222 5 - - v 2N2221A-2n2222a 6 - - h fe dc current gain (*) i c =0.1 ma, v ce =10 v 2n2221-2N2221A 20 - - - 2n2222-2n2222a 35 - - i c =1 ma, v ce =10 v 2n2221-2N2221A 25 - - 2n2222-2n2222a 50 - - i c =10 ma, v ce =10 v 2n2221-2N2221A 35 - - 2n2222-2n2222a 75 - - i c =10 ma, v ce =10 v t amb = -55c 2N2221A 15 - - 2n2222a 35 - - i c =150 ma, v ce =1 v 2n2221-2N2221A 20 - - 2n2222-2n2222a 50 - - i c =150 ma, v ce =10 v 2n2221-2N2221A 40 - 120 2n2222-2n2222a 100 - 300 i c =500 ma, v ce =10 v 2n2221 20 - - 2N2221A 25 2n2222 30 - - 2n2222a 40
npn 2n2221 ? 2N2221A 2n2222 ? 2n2222a 16/10/2012 comset semiconductors 3 | 4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ce(sat) collector-emitter saturation voltage (*) i c =150 ma, i b =15 ma 2n2221-2n2222 - - 0.4 v 2N2221A-2n2222a - - 0.3 i c =500 ma, i b =50 ma 2n2221-2n2222 - - 1.6 2N2221A-2n2222a - - 1 v be(sat) base-emitter saturation voltage (*) i c =150 ma, i b =15 ma 2n2221-2n2222 - - 1.3 v 2N2221A-2n2222a 0.6 - 1.2 i c =500 ma, i b =50 ma 2n2221-2n2222 - - 2.6 2N2221A-2n2222a - - 2 f t transition frequency i c =20 ma, v ce =20 v f= 100mhz 2n2221-2n22218a 2n2222 250 - - mhz 2n2222a 300 - - h fe small signal current gain i c =1 ma, v ce =10 v f= 1khz 2N2221A 30 - 150 - 2n2222a 50 - 300 i c =10 ma, v ce =10 v f= 1khz 2N2221A 50 - 300 2n2222a 75 - 375 t d delay time i c =150 ma, i b =15 ma -v bb =0.5 v, v cc =30 v 2N2221A - - 10 ns 2n2222a t r rise time i c =150 ma, i b =15 ma -v bb =0.5 v, v cc =30 v 2N2221A - - 25 ns 2n2222a t s storage time i c =150 ma, v cc =30 v i b1 = -i b2 =15 ma 2N2221A - - 225 ns 2n2222a t f fall time i c =150 ma, v cc =30 v i b1 = -i b2 =15 ma 2N2221A - - 60 ns 2n2222a r b ,c c feedback time constant i c =20 ma, v ce =20 v f= 31.8mhz 2N2221A - - 150 ps 2n2212a (*) pulse conditions : tp < 300 s, =2%
npn 2n2221 ? 2N2221A 2n2222 ? 2n2222a 16/10/2012 comset semiconductors 4 | 4 mechanical data case to-18 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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